"Microsoft's selection of the TSMC 90nm eDRAM process for the graphics-rich Xbox 360 is an important validation of the capability and maturity of the technology," said John Wei, senior director of Platform Marketing, Advanced Technology Division of TSMC. "Furthermore, the production marks the successful continuation to an ongoing collaboration between Microsoft and TSMC."
"TSMC provides the proven manufacturing and chip implementation services required to build a competitive silicon component in volume," said Bill Adamec, senior director of Semiconductor Technology of Microsoft. "The TSMC 90nm eDRAM process is exactly what we need to further strengthen our position in console gaming and entertainment."
TSMC has been in 90nm embedded DRAM production since the first quarter of 2006, and the design team has developed versatile sets of memory macros that are being used in more than a dozen 90nm customer products.
The TSMC 90nm embedded DRAM process is a CMOS logic process with an add-on memory module. The embedded process eliminates I/O power consumed in external DRAM interfaces, while providing a wider bus and BOM cost savings compared to external DRAM. This makes TSMC 90nm eDRAM ideal for system-on-chip (SoC) platforms used in high-bandwidth applications such as digital TV or game consoles, as well as low-power applications such as handheld and miniature consumer electronics. Less than half the size of an embedded SRAM macro, TSMC 90nm eDRAM consumes less power in both active and standby modes. Embedded memory also saves board space, enhances system reliability and reduces the soft error rate. Memory options are flexible to 1Mb of granularity.